Design and Modelling of Nanostructured Junctionless GAA FETs: Compound Semiconductor GAAs
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Beschrijving
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The book presents the design and modelling of Junctionless Semiconductor Gate-All-Around FETs developed using compound Semiconductors. The devices are designed with varying gate lengths from 20nm down to 10nm. The work mostly focuses on III-V semiconductors especially for trinary compounds such as InGaAs, InGaN and InGaP Nanowires. Electrical Parametric analysis is carried out for all the devices and compared with existing devices. Further, Temperature Analysis and performance of Junctionless Nanowire GAA FETs are analysed. Impact of Neutral Biomolecules on the semiconductor Nanowire devices are further analysed for biosensing applications.
Beschrijving
(2)
The book presents the design and modelling of Junctionless Semiconductor Gate-All-Around FETs developed using compound Semiconductors. The devices are designed with varying gate lengths from 20nm down to 10nm. The work mostly focuses on III-V semiconductors especially for trinary compounds such as InGaAs, InGaN and InGaP Nanowires. Electrical Parametric analysis is carried out for all the devices and compared with existing devices. Further, Temperature Analysis and performance of Junctionless Nanowire GAA FETs are analysed. Impact of Neutral Biomolecules on the semiconductor Nanowire devices are further analysed for biosensing applications.
Amazon MarketplacePagina's: 148, Paperback, LAP LAMBERT Academic Publishing
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