Influence of Temperature on Nanoscale Semiconductor Devices

The book investigates the impact of temperature on electron transport in Double-Gate (DG) and Silicon-On-Insulator (SOI) MOSFETs using a quasi-ballistic transport model. By employing the NanoMOS simulation tool, the study examines key transport parameters such as drain current, electron velocity, 2D electron density, and channel resistance over a temperature range of 50K to 850K and varying doping concentrations. The results show that SOI MOSFETs outperform DG MOSFETs at higher temperatures and doping levels, offering better electron mobility and stronger on-state current. However, DG MOSFETs are more suitable for smaller channel lengths due to their superior on-state current at 10 nm. The findings suggest that temperature and doping concentration significantly influence MOSFET performance, providing insights into optimizing device design for high-performance applications.