RCA Clean: Redox, Diffusion, Chemical Vapor Deposition, Wafer, Semiconductor, RCA, Oxide, Silicon Dioxide, Trichloroethylene, Acetone

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. The RCA clean is a standard set of wafer cleaning steps which needs to be performed before high temp processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America It involves the following : 1. Removal of the organic contaminants (Organic Clean) 2. Removal of thin oxide layer (Oxide Strip) 3. Removal of ionic contamination (Ionic Clean) The first step (called SC-1, where SC stands for Standard Clean) is performed with a 1:1:5 solution of NH4OH + H2O2 + H2O at 75 or 80 degrees (Celsius). This treatment results in the formation of a thin silicon dioxide layer (about 10 Angstrom) on the silicon surface, along with a certain degree of metallic contamination (notably Iron) that shall be removed in subsequent steps.

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