Fundamentals of Semiconductors: Physics and Materials Properties

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Bol Provides explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This title emphasises on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. This fourth edition of the well-established Fundamentals of Semiconductors serves to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems "lead the student by the hand" to arrive at the results. The major changes made in the fourth edition include: an extensive appendix about the important and by now well-established deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters. Some of the solutions contain extensions via discussion about topics of current interest in the field of semiconductor physics, such as spin-orbit coupling and k-linear band dispersion. Since the appearance of our book, Fundamentals of Semiconductors: Physics and Materials Properties, one of the questions we are asked most frequently is this: “is there a solution manual to this book?” In preparing the questions at the end of each chapter we have already tried to guide the readers to derive the answers by themselves using a step-by-step approach. Clearly this strategy did not work for everyone. We recognize that many of the questions in this book are quite challenging and often require reading of research papers to solve them. In response to readers demand we have - cided to provide solutions to some of the problems in this new edition. Since working through problems is an important and necessary part of the learning process in physics we will not give the solutions to all the problems. Instead, we hope to use the solutions to a number of selected problems in each ch- ter as an additional study help to the readers. We like to use these solutions to provide more in depth discussions to topics which may be too specialized for a typical course on semiconductor physics. By leaving enough unsolved problems and adding a few new ones there are still plenty of opportunities for both the instructors to choose problems for assignments and for students to test their understanding of the text.

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Provides explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This title emphasises on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. This fourth edition of the well-established Fundamentals of Semiconductors serves to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems "lead the student by the hand" to arrive at the results. The major changes made in the fourth edition include: an extensive appendix about the important and by now well-established deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters. Some of the solutions contain extensions via discussion about topics of current interest in the field of semiconductor physics, such as spin-orbit coupling and k-linear band dispersion. Since the appearance of our book, Fundamentals of Semiconductors: Physics and Materials Properties, one of the questions we are asked most frequently is this: “is there a solution manual to this book?” In preparing the questions at the end of each chapter we have already tried to guide the readers to derive the answers by themselves using a step-by-step approach. Clearly this strategy did not work for everyone. We recognize that many of the questions in this book are quite challenging and often require reading of research papers to solve them. In response to readers demand we have - cided to provide solutions to some of the problems in this new edition. Since working through problems is an important and necessary part of the learning process in physics we will not give the solutions to all the problems. Instead, we hope to use the solutions to a number of selected problems in each ch- ter as an additional study help to the readers. We like to use these solutions to provide more in depth discussions to topics which may be too specialized for a typical course on semiconductor physics. By leaving enough unsolved problems and adding a few new ones there are still plenty of opportunities for both the instructors to choose problems for assignments and for students to test their understanding of the text.

Bol Partner

This third updated edition of Fundamentals of Semiconductors attempts to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems lead the student by the hand to arrive at the results.


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  • 9783540413233
  • 9783642007095
  • 9783540254706
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